Work

High Electrical Conductivity and High Hardness in Cubic Silicon Carbide Single Crystals

Year: 2025

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5c01665

Authors: Yunfan Yang, Zhaolong Liu, Guobin Wang, Da Sheng, Yehua Huang, Hui Li, Xu Chen, Xu Chen, Huiyang Gou, Wenjun Wang, Zesheng Zhang, Junwei Yang, Xiaolong Chen, Xiaolong Chen

Institutions: Chinese Academy of Sciences, Institute of Physics, University of Chinese Academy of Sciences, Center for High Pressure Science and Technology Advanced Research, Center for High Pressure Science & Technology Advanced Research

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, Beijing Municipal Science and Technology Commission, Beijing Municipal Natural Science Foundation, National Key Research and Development Program of China

Awards: G4109201090, G5503053576, G6851648573, G7589651442

OpenAlex ID: W4417280690

FWCI: 0.45

Cites: 55

Cited by: 2

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