Work

Growth and characterization of InGaAs-channel HEMTs on GaAs (100) with pre-grown InP metamorphic buffer layers

Year: 2025

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ae2d5f

Authors: Hyunchul Jang, Jae-Phil Shim, Geunuk Han, Yunji Jeong, Inseon Song, Il-Hyeong Lee, Deoksoo Park, Eun-kyung Chu, Seung Heon Shin, Keun-Man Song

Institutions: Korea Advanced Nano Fab Center, Soonchunhyang University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4417409657

FWCI:

Cites: 29

Cited by:

Related to: 10