Work

Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES study

Year: 1988

Type: article

Source: Surface Science

DOI: 10.1016/0039-6028(88)90354-8

Authors: V.V. Korobtsov, V.G. Lifshits, A.V. Zotov

Institutions: Institute of Automation and Control Processes, Academy of Sciences of the Soviet Union

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W49798706

FWCI: 6.21

Cites:

Cited by: 82

Related to: 10