Work

Post-deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors

Year: 2004

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2004.p5-12

Authors: M. Sasagawa, K. Kita, K. Kyuno, A. Toriumi

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W565473180

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