Work

Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction

Year: 2015

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2015.06.002

Authors: T.A. Karatsori, C.G. Theodorou, E.G. Ioannidis, S. Haendler, E. Josse, C.A. Dimitriadis, G. Ghibaudo

Institutions: Aristotle University of Thessaloniki, Institut de Microélectronique, Electromagnétisme et Photonique, Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, STMicroelectronics (France)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: European Social Fund

OpenAlex ID: W565794827

FWCI: 3.777

Cites: 24

Cited by: 73

Related to: 10