Work

Electroluminescence Characteristics of Yellow Luminescence-Like Defects in GaN HEMTS at Off-state Conditions

Year: 2007

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2007.p-6-11l

Authors: Hsiang Chen, John Lai, Sheng-Chin Kung, Reginald Penner, Guann-Pyng Li

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W575614697

FWCI:

Cites:

Cited by:

Related to: 10