Light Induced Degradation of Rear Passivated mc-Si Solar Cells
Year: 2012
Type: article
Abstract: We compare the degradation behaviour of rear-passivated high efficiency silicon solar cells processed from mc-, Cz-, and cast-mono Si materials. We observe that cells processed from mc-Si unexpectedly show a stronger degradation than cells processed from cast-mono or Cz-Si. Using Ga-doped mc-Si, we prove that the degradation observed on mc-Si cannot be attributed to B-O complex formation or FeB pair dissociation. For castmono, a similar degradation characteristic as for mc-Si is observed, however, the degradation is much less pronounced, making this material class a favourable candidate for processing of high efficiency rear passivated solar cells.
Source: EU PVSEC
Authors: Ramspeck, K., Zimmermann, S., Nagel, H., Metz, A., Gassenbauer, Y., Birkmann, B., Seidl, A.
Institution: Carl Zeiss (Germany)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W61576843