Work

Effects of Implanted Dopants in the LDD Region on the Short Channel Effect of a Deep Sub-Micron MOS Device

Year: 1995

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.1995.pd-l1-l2

Authors: B. J. Koo, D. J. Jung, J. W. Park, N. S. Kang, T. E. Shim, M. Y. Lee

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W639769407

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