Work

(Ba_<0.75>Sr_<0.25>)TiO_3 Films for 256 Mbit DRAM (Special Issue on Quarter Micron Si Device and Process Technologies)

Year: 1994

Type: article

Source: IEICE Transactions on Electronics

Authors: Tsuyoshi Horikawa, Noboru Mikami, H. Ito, Yoshikazu Ohno, Tetsuro Makita, Kazunao Sato

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W641098552

FWCI: 2.397

Cites:

Cited by: 11

Related to: 10