Work

A Compact Model for Silicon-on-Insulator LDMOST, Including Accumulation, Lateral Doping Gradient and High Side Behaviour

Year: 2001

Type: conference-paper

Source: ePrints Soton (University of Southampton)

Authors: N. D'Halleweyn, J. D. Benson, M. Swanenberg, W. Redman-White

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W64327753

FWCI: 0.865

Cites:

Cited by: 3

Related to: 10