Work

GaN Growth by Plasma Assisted Reactive Evaporation

Year: 1998

Type: conference-paper

Source: International Workshop on Physics of Semiconductor Devices

Authors: Rupam Sinha, Sourav Pal, Shivani Sharma, Gurudutt Dubey, S.K. Shukla

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W64413400

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