Work

Re-examination of Impact of Intrinsic Dopant Fluctuations on SRAM Static Noise Margin

Year: 2004

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2004.b-4-3

Authors: Fumihiko Tachibana, Toshiro Hiramoto

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W650207644

FWCI: 1.661

Cites:

Cited by: 10

Related to: 10