Improvement in deposition rate and quality of films prepared by "thin liquid-film" ferrite plating method.
Year: 1987
Type: article
Abstract: We have plated polycrystalline CoxFe3-xO4 films by “thin liquid-film” method at T=55-90°C and pH=7.0 using NaNO2 as an oxidizing agent. The film quality was improved by (1) introducing CH3COONH4 buffer which stabilizes the pH, and (2) filtering the reaction solution. Thus we obtained a film deposition rate of 300 Å/min at 90°C for x=0 and 0.43 without deterioration of the film quality. The deposition rate increased with the temperature. The films of Fe3O4 and CoxFe3-xO4 (x=0.43) plated at 90°C on glass substrates exhibited a preferential texture of (100) and (111) planes respectively, parallel to the surface. Both films had a columnar structure normal to the surface plane, but the magnetization lay in the surface plane. Fe3O4 films plated at 90°C on α-Al2O3 (0001) and MgAl2O4 (100) crystal plates exhibited a preferential texture of (111) and (100) planes, respectively, the oxygen-packing layer of the substrate coinciding with that of the ferrite film.
Authors: Y. Goto, Y. Tamaura, M. Abe, M. Gomi
Institution: Tokyo Institute of Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W654040740