Work

AlGaN/GaN HFET with composite 'slow/fast' gate

Year: 2011

Type: article

Source: Scholar Commons (University of South Carolina)

Author: A. Sattu

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W66884348

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Related to: 10