Work

Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate

Year: 2025

Type: article

Abstract: The photoluminescence spectra of short-period InGaAs/InAlAs superlattices emitting in the 1.3 μm spectral range were investigated in the wide range of pumping powers at the temperatures of 5-300 K. The 5 K photoluminescence spectra consisted of luminescence bands associated with radiative electron-hole recombination in superlattices as well as in the InP substrate and buffer layers of heterostructures. Spectral positions of superlattice emission bands are in a good agreement with calculated values obtained with transfer matrix method for all the samples. The temperature evolution of emission spectra was investigated as well.

Source: St. Petersburg State Polytechnical University Journal

DOI: 10.18721/jpm.183.117

Authors: Voitovich, Veronica, Makhov, Ivan, Andryushkin, Vladislav, Kopytov, Pavel, Papylev, Denis, Kryzhanovskaya, Natalia, Zhukov, Alexey

Institutions: National Research University Higher School of Economics, ITMO University

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7116282974

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