Work

Giant ferroelastic stress modulation in AlGaN/GaN heterostructure and its transport mechanism

Year: 2026

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2026.110418

Authors: Junxiong Chai, Zhezhe Cong, Xiaoli Lu

Institutions: Hebei GEO University, Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Department of Education of Hebei Province, Hebei Provincial Department of Bureau of Science and Technology, Hebei GEO University

Awards: G1184246633, G2713469878

OpenAlex ID: W7119006166

FWCI:

Cites: 26

Cited by:

Related to: 10