Work

Analysis of the ZTC Bias Points in the FinFET Gate Capacitance and Transition Frequency

Year: 2025

Type: conference-paper

DOI: 10.1109/icm66518.2025.11322461

Authors: Miguel Coelho, Pedro Toledo, Alexandra Matos, Rafael Martins, Rafael Ferreira, Boyapati Subrahmanyam, Luis B. Oliveira, José Soares Augusto, João P. Oliveira

Institutions: University of Lisbon, Universidade Nova de Lisboa

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7123337231

FWCI:

Cites: 37

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Related to: 10