Work

Crystal Indium Oxide for 64-kbit 2T0C Memory with 5-ns Read Time, Monolithically Stacked on Si CMOS

Year: 2025

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm50572.2025.11353890

Authors: T. Matsuzaki, K. Furutani, T. Ito, T. Ebihara, H. Inoue, T. Hirose, H. Katagiri, C. Inagaki, H. Komagata, Y. Ando, M. Kurata, T. Murakawa, F. Isaka, Y. Egi, T. Onuki, Y. Yakubo, T. Nakura, S. Yamazaki

Institutions: Semiconductor Energy Laboratory (Japan), Fukuoka University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7126241925

FWCI: 3.412

Cites: 4

Cited by: 2

Related to: 10