Work

Performance improvement of green VCSELs with GaN/low-indium-content InGaN hybrid last quantum barrier

Year: 2026

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ae405b

Authors: Yuanchao Li, Taiping Lu, Shun Gu, Xiantian Shi, Zhigang Jia, Xiansheng Tang, Zhen Deng, Dengying Zhang, Yadan Zhu, Lichun Zhang

Institutions: Ludong University, Taiyuan University of Technology, Qilu University of Technology, Shandong Academy of Sciences, Chinese Academy of Sciences, Institute of Physics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province

Awards: G4559227449, G7691346489

OpenAlex ID: W7127096015

FWCI: 0.967

Cites: 34

Cited by: 1

Related to: 10