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Atomic Layer Deposition - ZnO - DEZn - H2O

Year: 2026

Type: dataset

Abstract: This comparison summarizes reported Atomic Layer Deposition (ALD) processes for zinc oxide (ZnO) thin films using diethylzinc (DEZn) as the metal precursor and water (H₂O) as the coreactant. It highlights key process parameters and outcomes across studies to enable direct comparison of growth conditions, film properties, and performance metrics for the DEZn/H₂O ALD system.

Source: Open Research Knowledge Graph (ORKG)

DOI: 10.48366/r1583016

Authors: Vesa Lujala, Jarmo Skarp, Markku Tammenmaa, Tuomo Suntola, A. Shimizu, S. Chaisitsak, T. Sugiyama, A. Yamada, M. Konagai, Jari Malm, Elina Sahramo, Maarit Karppinen, Robin H. A. Ras

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7128613445

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