Work

Nitrogen vacancy mediated electron transport processes in nitrogen-deficient γ ′ ′ − FeN and γ ′ ′ ′ − FeN epitaxial films

Year: 2026

Type: article

Source: Physical review. B./Physical review. B

DOI: 10.1103/47x9-r87b

Authors: Yu Shang, Shun Niu, Xiao-Xu Zhang, Ming-Yue Zhao, Guo-Ke Li, De-Wei Zhao, Ma Li, Cong-Mian Zhen, Deng-Lu Hou

Institution: Hebei Normal University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Hebei Normal University

Awards: G6507024474, Heusler合金中基于一级磁致结构相变原理的应变调控自发交换偏置研究

OpenAlex ID: W7138472012

FWCI: 0.831

Cites: 56

Cited by: 1

Related to: 10