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ELECTRICAL PROPERTIES OF Si ION-IMPLANTED GaN MISFET

Year: 2013

Type: conference-paper

Abstract: I-V characteristics of Si ion implanted normally-off GaN MISFET were demonstrated. I_dss of 94.3 mA/mm, g_mmax of 36.9 mS/mm and threshold voltage of +1.5 V were obtained for GaN MISFETs with a gate length of 0.6 μm.

Source: Institutional Repositories DataBase (IRDB)

DOI: 10.15002/00031748

Authors: Kasai, Hayao, Ogawa, Hiroki, Nomoto, Kazuki, Nakamura, Tohru

Institution: Hosei University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7144058630

FWCI:

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