Work

Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing

Year: 2020

Type: conference-paper

Source: Institutional Repositories DataBase (IRDB)

Authors: 五十嵐智, Satoshi Igarashi, Yusuke Mochiduki, 谷川晴紀, Haruki Tanigawa, 濱田昌也, Masaya Hamada, 松浦賢太朗, Kentaro Matsuura, 宗田伊理也, Iriya Muneta, 角嶋邦之, Kuniyuki Kakushima, 筒井一生, Kazuo Tsutsui, 若林整, Hitoshi Wakabayashi

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7146025035

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