ムーアの法則以降の新しい半導体メモリとトランジスタの技術動向
Year: 2016
Type: article
Abstract: Trend of novel semiconductor memory and transistor for post Moore’s low have been described. For promising candidates for replacing presently available planar transistor are 3 dimensional transistors such as FinFET and SGT. Next candidate of FinFET is novel FinFET technology featured with plural number of trench depth with only one process step. Promising candidates of next generation memory are stacked type NAND flash memory and stacked type NAND new type memory which use SGT and BiCS technology. Especially, stacked type NAND new type memory has potential which replace not only high performance memory but also presently available system LSI.
Language: Japanese
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7146594604