Work

Impact of bowing parameter on the performance of BGaN/BGaN active layers in edge emitting laser diodes

Year: 2026

Type: article

Source: Physica Scripta

DOI: 10.1088/1402-4896/ae6c65

Authors: Mussaab I Niass, Hameed Ur Rehman, Mohammed S M Gismalla, Fang Wang, Wengang Bi, Yuhuai Liu

Institutions: International University of Africa, Kampala International University, Chinese University of Hong Kong, South East Technological University, Zhengzhou University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Chinese University of Hong Kong, Shenzhen

OpenAlex ID: W7160959607

FWCI:

Cites: 48

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Related to: 10