Work

Interface states and series-resistance-controlled electrical behavior quality of ECR-PECVD SiO2/p–Si MOS structure

Year: 2026

Type: article

Source: MRS Advances

DOI: 10.1557/s43580-026-01672-x

Authors: Omar Rejaiba, Alejandro F. Braña de Cal, Adel Matoussi

Institutions: University of Gabès, Universidad Autónoma de Madrid, University of Sfax

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7161962004

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Cites: 27

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Related to: 10