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Vertical GaN Schottky Barrier Diodes With Polarized P-InGaN/P-GaN Heterojunction Termination Extension Structure

Year: 2026

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2026.3697516

Authors: Bin Zhao, Liyang Chai, Weizhe Wang, Ningyang Liu, Lei Li

Institutions: Tianjin University, Guangdong Academy of Sciences, Institute of Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Tianjin University

OpenAlex ID: W7163000497

FWCI:

Cites: 32

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Related to: 10