Optimization of CISSe/CdS/ZnO/SLG Solar Cell: Simulation Study on Electrical losses Effected by Metastable Defects
Year: 2026
Type: preprint
Abstract: The performance of (CISSe) thin-film solar cells is strongly influenced by interfacial band alignment, contact properties, and carrier-transport mechanisms. In this work, a comprehensive numerical investigation of CISSe/CdS/ZnO/SLG solar cells was carried out using SCAPS-1D to evaluate the combined effects of illumination direction, back-contact metal work function, parasitic resistances, electron affinity, and absorber bandgap on device performance. The results reveal that the conventional top-illuminated configuration outperforms bottom illumination, achieving a power conversion efficiency (PCE) of 22.10%, a fill factor (FF) of 80.31%, an open-circuit voltage (Voc) of 0.5775 V, and a short-circuit current density (Jsc) of 47.20 mA cm⁻². Band-alignment analysis shows that a cliff-like conduction-band offset of -0.2 eV at the CdS/CISSe interface and a large valence-band barrier of -0.9 eV at the ZnO/CdS interface contribute to carrier accumulation and recombination losses. Furthermore, increasing the back-contact metal work function from 4.9 to 5.7 eV reduces the majority-carrier barrier height from 0.44 to -0.36 eV, promoting quasi-Ohmic contact formation and improving carrier extraction. The effects of series and shunt resistances demonstrate that low Rs (2 Ω·cm²) and high Rsh (10 kΩ·cm²) are essential for minimizing electrical losses and maximizing photovoltaic performance. In addition, absorber-layer engineering through simultaneous optimization of electron affinity and bandgap significantly enhances device operation. The optimum configuration, obtained at χ = 4.05 eV and Eg = 1.45 eV, delivers a maximum PCE of 33.34%, FF of 85.05%, Voc of 0.9115 V, and Jsc of 44.27 mA cm⁻². These findings provide valuable guidelines for the design of next-generation high-performance CISSe thin-film solar cells.
Source: Research Square
Authors: Mouad Chettab, Selma Rabhi, Halima Djaaboube
Institution: University Frères Mentouri Constantine 1
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7165960596