Work

Compact Model for Accurate Decoupling of Interface and Buffer Traps in HEMTs

Year: 2026

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2026.3707131

Authors: Fanyuan Zhang, Xu Hou, Aoran Fan, Juan Xue, Fengyi Li, Weigang Ma, Xing Zhang

Institutions: Tsinghua University, Shanghai Polytechnic University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G3854170181

OpenAlex ID: W7166830232

FWCI:

Cites: 38

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Related to: 10