Gallium Arsenide Differential Stage of Class AB with a Chain of Nonlinear Correction of the Flow Characteristics
Year: 2026
Type: conference-paper
Abstract: A new class AB differential cascade circuit has been investigated, realized on the ground of a combined production process to make it possible to design only GaAs nJFET field-effect transistors and GaAs p-n-p BJTs. Data obtained through computer simulation are presented, showing the possibility of a significant improvement in the dynamic characteristics of operational amplifiers in the high-signal mode using the considered DS. The Computer modeling results in LTspice environment are presented, confirming the effectiveness of the proposed approach, in which the studied OAmp based on the developed DS demonstrates an open gain of 85 dB and high output voltage rise rates with low static current consumption: up to $1244 \mathrm{~V} / \mu \mathrm{s}$ for the leading edge and $855 \mathrm{~V} / \mu \mathrm{s}$ for the rear. Due to the use of broadband semiconductors, the considered schematic solutions are promising for application in space instrumentation, oil and energy, automobile and aeronautical manufacturing, where high productivity and performance at elevated temperatures are critical.
Institution: Don State Technical University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W7202260804