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Enhanced thermal robustness of laminated Hf0.5Zr0.5O2 ferroelectric film via Al2O3 mid-layer engineering

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Year: 2026
Type: article
Source: Applied Surface Science
DOI: 10.1016/j.apsusc.2026.168116
Authors: Seonggeun Kim, Seungwon Go, Jangsaeng Kim, Sihyun Kim, Sangwan Kim
Institution: Sogang University
Language: English

Topic: Ferroelectric and Negative Capacitance Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
SDG: Affordable and clean energy

Open Access status: closed

Funders: Ministry of Education, Ministry of Trade, Industry and Energy, National Research Foundation of Korea, Ministry of Science and ICT, South Korea, Samsung
Awards: G2643336817, G3800596590, G4508828515, G5995805984, G6754764365, G6940113471
OpenAlex ID: W7202356972
FWCI:
Cites: 26
Cited by:
Related to: 10
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