Performance Uplift in ACZTS/CIGSSe Solar Cells through $\text{Cr}_{2} \mathrm{O}_{3}$ HTL Engineering and Smart Predictive Strategies
Year: 2026
Type: conference-paper
Abstract: ACZTS and CIGSSe based double-absorber solar cells are attracting significant attention because of their high efficiency, mechanical flexibility, and cost-effective fabrication process. These materials possess a direct bandgap along with strong optical absorption$\left(\sim {10}^{{5}} \text{cm}^{-{1}}\right)$, which makes them highly suitable for photovoltaic applications. In the present work, AFORS-HET simulation has been used to study the effect of CeZnO as a buffer layer and$\text{Cr}_{2} \mathrm{O}_{3}$as a hole transport layer (HTL) for improving the performance of CIGSSe-based solar cells. The proposed device structure AI/FTO/CeZnO/ACZTS/CIGSSe/Cr${ }_{2} \mathrm{O}_{3}$/Au is designed to reduce carrier recombination losses and enhance charge transport. Further optimization of the CIGSSe absorber layer thickness, doping concentration, and operating temperature resulted in improved device performance. The optimized structure shows a simulated open-circuit voltage (Voc) of 958 mV, short-circuit current density (Jsc) of 27.97 mA/cm${ }^{\mathbf{2}}$, fill factor (FF) of 86.54%, and power conversion efficiency of 23.18%. In addition, a machine learning approach predicts a slightly higher efficiency of 23.54%, indicating better performance compared to conventional solar cell designs.
Institutions: SR University, JSPM University, KIIT University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W7203774680