A Dual-Band THz Receiver in 65-nm CMOS
Year: 2026
Type: article
Abstract: This letter presents a 0.24-/0.72-THz dual-band receiver in 65-nm CMOS technology. A dual-band double-balanced mixer supporting both fundamental and third-order subharmonic mixing enables operation in two frequency bands within a single architecture. A differential end-fed slot antenna with two open-ended stubs enables efficient radiation and directly provides the required RF impedance to the mixer in both bands. The local oscillator (LO) chain employs quadrature-driven power-combined doublers to enhance output power while reducing passive-network loss between doublers and subsequent differential stages. Measurements demonstrate peak conversion gains (CGs) of 7.8dB at 0.25THz and −6.6dB at 0.73THz, with corresponding minimum noise figures (NFs) of 15.3 and 27.9dB, respectively. With an integrated voltage-controlled oscillator (VCO), the receiver achieves input frequency spans of 50 and 146GHz in the fundamental and third-order subharmonic bands, respectively.
Institution: Southeast University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,645
OpenAlex ID: W7204097130