EFFECT OF GAMMA-IRRADIATION ON THE ELECTROPHYSICAL PROPERTIES OF LAYERED GaS:Er SINGLE CRYSTALS
Year: 2026
Type: article
Abstract: The electrical and photoelectrical properties of layered GaS:Er single crystals, gamma-irradiated at room temperature at absorbed dose range D = 20…100 krad have been investigated. It has been established, that both donorand acceptor-type defects are formed during doping and irradiation, leading to a decrease in electrical conductivity. At low temperatures (T = 125…180 K), the activation energy of the levels was determined to be 0.036 eV for Erdoped GaS single crystals, while for irradiated samples it was found to be 0.068 and 0.120 eV for doses of D = 20 and 50 krad, respectively. After irradiation, the band gap of the sample arises with increasing dose from 2.48 to 2.91 eV and the photocurrent spectrum maximum shifts toward higher energy regions. The obtained results demonstrate that GaS:Er single crystals can be considered promising functional materials for optoelectronic applications and radiationresistant semiconductor devices through controlled defect engineering.
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W7204107101