Work

Yield-Loss in HV ESD Device Caused by the CESL-Charge-Induced Breakdown Voltage Degradation

Year: 2026

Type: conference-paper

Abstract: This work examines the impact of plasma-induced charge trapping in the contact-etch-stop layer (CESL), a multilayer dielectric stack deposited by plasma-enhanced chemical vapor deposition (PECVD), on the breakdown voltage of a high-voltage (HV) ESD protection device. Since PECVD inherently exposes the CESL to energetic ions and electrons, trapped charge accumulation is unavoidable. These charges electrostatically modulate the surface potential of reduce-surface field (RESURF) region, thereby lowering the device's breakdown voltage. The degradation characteristics weaken the robustness of the ESD device and ultimately contribute to product yield loss.

Source: IEEE International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)

DOI: 10.1109/icce-taiwan71481.2026.11652437

Authors: Jian-Hsing Lee, Chih-Hsuan Lin, Shih-Chieh Chien, Chien-Wei Wang, Chih-Jui Lai, Yeh-Ning Jou, Chih-Fang Huang

Institutions: Vanguard International Semiconductor (Taiwan), National Tsing Hua University

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W7204129055

FWCI:

Cites: 3

Cited by:

Related to: 10