Work

GaN HEMTs Dynamic Instabilities Caused by Gate Voltage Spikes via pGaN Potential Biasing

Year: 2026

Type: conference-paper

Abstract: Schottky pGaN HEMTs are not yet fully adopted, partly because their electrical characteristics fluctuate during dynamic operation. In this article, we demonstrate experimentally for the first time that gate voltage overshoots cause such dynamic instabilities. Capacitive charge storage in the pGaN layer during the voltage spike biases the pGaN potential. This bends the gate band diagram toward off-state, which results in a higher Ron (+400 %) and Vth (+125 %) even within the manufacturer safe operating area. The phenomenon is coherent with previous literature of pGaN potential biasing and with the known two-diode model of the gate, as simulated in NGspice.

Source: HAL

Authors: Roche, Ludovic, Trémouilles, David, Marcault, Emmanuel, Alonso, Corinne

Institutions: Laboratoire d'Analyse et d'Architecture des Systèmes, Université de Toulouse, Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7204152578

FWCI:

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