MoS 2 based TFET Biosensor with Enhanced Electrostatic Control and RF Efficiency for Label-Free Molecular Detection
Year: 2026
Type: conference-paper
Abstract: Increasingly acute demands on ultra-low-power and high-sensitivity biosensors have further fueled interest in research on tunneling field-effect transistor (TFET)-based architectures based on two-dimensional (2D) materials. A case of a $\mathbf{M o S}_{\mathbf{2}}$-based dual-metal gate TFET ($\mathbf{M o S}_{\mathbf{2}}$-DMG-TFET) with a cavity, filled with a biomolecule, is systematically studied by two-dimensional TCAD (Technology Computer-Aided Design) simulations. The proposed structure is based on the fact that monolayer $\mathbf{M o S}_{\mathbf{2}}$ has the highest electrostatic control, whereas both the effective electric-field engineering and the dual-metal gate structure have the capability of engineering the electric field so that the band-to-band tunneling efficiency can be improved. This sensing mechanism is achieved through dielectric modulation caused by biomolecules with a permittivity ranging from 2 to 12. The properties of transfer have been shown to exhibit a strong increase in drain current with the biomolecule permittivity, with a sensitivity of over 800 percent at increased values of εbio. A notable drop in subthreshold swing and an increase in threshold voltage indicate better switching efficiency. Moreover, analog and RF performance parameters such as transconductance, cutoff frequency, and maximum oscillation frequency also improve considerably with increased biomolecule permittivity, indicating the application of the proposed device to the biosensing of high-frequency measurements. Analysis of temperature dependence indicates that the device can be operated over a large temperature range (270-420 K) and that the trends of thermal degradation are predictable. Such findings make $\mathbf{M o S}_{\mathbf{2}}$-DMG-TFET a promising candidate as the next-generation low-power and high-sensitivity biosensors with digital, analog, and RF capabilities.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W7204189731