Work

Investigation of Frequency-Reliant Dielectric Constant-Dependent Drain-Engineered Ferroelectric Gate Tunnel FET for Biosensing in Glioblastoma Multiforme

Year: 2026

Type: article

Abstract: A ferroelectric (Fe) gate dielectric-modulated (DM) drain-engineered (DE) tunnel field-effect transistor (Fe-DM DE TFET) biosensor for detecting and differentiating brain tissues, in particular glioblastoma, meningioma, white matter, and gray matter, based on their frequency-dependent permittivity, is presented in this article. According to the study, tumor tissues show distinct permittivity peculiarities compared to normal brain matter. This investigation analyses the impact of dielectric dispersion in specific tissues on device performance. Higher dielectric constants associated with tumor tissues enhance tunneling and gate coupling, thereby increasing theon-state current, altering gate capacitance and transconductance, and improving the sensor’s sensitivity. Comprehensive Sentaurus TCAD simulations demonstrate that the proposed biosensor exhibits high drain current sensitivity in the$10^{{5}}$range. A low detection limits across a wide range of frequencies (1, 5, and 10 GHz), making it ideal for label-free, noninvasive biomedical diagnostics. The suggested Fe-DM DE TFET that relies on a dielectric-constant biosensor is a suitable platform for detecting and differentiating early-stage brain tumors.

Source: IEEE Sensors Journal

DOI: 10.1109/jsen.2026.3721860

Authors: Sirisha Meriga, Harshit Srivastava, Satyabrata Jit

Institution: Indian Institute of Technology BHU

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Good health and well-being

Open Access status: hybrid

Estimated APC paid: $2,645