Effect of Tin Incorporation on Structural, Optical and Electrical Properties of Zinc Selenide Thin Films Prepared by Chemical Bath Deposition Method
Year: 2026
Type: article
Abstract: This study investigates the influence of tin (Sn) incorporation at varying concentrations (0%, 2%, 4%, and 6%) on the structural, optical, and electrical properties of zinc selenide (ZnSe) thin films synthesized via chemical bath deposition. Structural analysis reveals that increasing tin content leads to a significant narrowing of the dominant diffraction peak, indicating enhanced crystallinity and grain growth. Energy-dispersive X-ray spectroscopy (EDAX) confirms the presence of Sn, Zn, and Se, validating successful tin incorporation into the ZnSe lattice. Optical characterization demonstrates a systematic increase in absorbance with higher tin concentrations, accompanied by a reduction in the optical bandgap from 2.57 eV to 2.38 eV. Electrical measurements reveal a notable decrease in resistivity from 10⁶ Ω-cm to 10³ Ω-cm with increasing tin content, suggesting improved conductivity. These findings highlight the potential of tin-doped ZnSe thin films for optoelectronic applications, offering tunable optical and electrical properties through controlled tin incorporation.
Source: MatSci express.
Institution: Shirish Madhukarrao Chaudhari College, Jalgaon
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W7204623260