Work

Electric gate control of Schottky ferroelectric Pt/ZrO2/Pt/n-Si/Al three-terminal devices

Year: 2026

Type: article

Abstract: We show that an applied backgate voltage in three-terminal ferroelectric Pt/ZrO 2 /Pt/doped Si/Al devices is able to tune the effective bias potential as well as the barrier height at the Pt/ZrO 2 interface. The electrically tunable Schottky barrier, due to the ferroelectric response of ZrO 2 , is observed at gate voltages as small as 1 µV, and produces a modulation of the drain current with four orders of magnitude at room temperature. These findings are supported by electrical measurements and AFM, XRD and XPS analyses.

Source: Applied Physics A

DOI: 10.1007/s00339-026-10155-7

Authors: Mircea Dragoman, Silviu Vulpe, Florin Nastase, Adrian Dinescu, Cosmin Romanitan, Octavian Ligor, Alina Cismaru, Daniela Dragoman, Nikolay Djourelov, Andreea Bianca Serban

Institutions: National Institute for Research and Development in Microtechnologies, University of Bucharest, Academia Oamenilor de Știință din România, Horia Hulubei National Institute for R and D in Physics and Nuclear Engineering, Extreme Light Infrastructure - Nuclear Physics

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,790

Funders: Ministerul Educaţiei Naţionale, European Regional Development Fund

Awards: G433506738, G6710639543

OpenAlex ID: W7204774101

FWCI:

Cites: 18

Cited by:

Related to: 10