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On the role of surface oxidation in the nucleation delay in ALD of AlN

Year: 2026
Type: article
Abstract: Ambient pressure XPS studies of atomic layer deposition of AlN show that formation of AlO x hinders formation of AlN.
DOI: 10.1039/d6tc02829b
Authors: Pamburayi Mpofu, Peggy Bagherzadeh Tabrizi, Houyem Hafdi, Jonas Lauridsen, Oscar Alm, Tommy Larsson, Rosemary Jones, Esko Kokkonen, Joachim Schnadt, Henrik Pedersen
Language: English
Open Access status: hybrid
Funders: Stiftelsen för Strategisk Forskning, VINNOVA, Svenska Forskningsrådet Formas, Linköpings Universitet, Vetenskapsrådet, Stiftelsen för Strategisk Forskning, Seco Tools
Awards: G1005022168, G1696766764, G193668846, G208125138, G2156986825, G2963976641, G317939215, G3728818118, G407650637, G432129169, G4466992459, Photo-assisted atomic layer deposition in real time, G5096929151, MAX IV operations – Formas, G5224014036, G5229471624, G5434537738, G594270511, G712881263, MAX IV operations 2019-2021, G8674945231, Surface chemical mechanisms in atomic layer deposition of hard nitrides, G8693631393
OpenAlex ID: W7204806936
FWCI:
Cites: 72
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Related to: 10