Work

[Best poster award] Optimization of fully vertical GaN-on-silicon MOSFET for high-power energy conversion

Year: 2025

Type: conference-paper

Abstract: Most electrical components on the power conversion market are IGBT or vertical MOSFET made of Si. However, their performances are limited by silicon physical properties (low thermal conductivity, low breakdown electric field...). Other materials like SiC and GaN have emerged has a replacement. However silicon carbide, even if very well suited for power conversion, remains expensive as it cannot be grown on silicon but only pricey bulk substates. For this reason, GaN-on-Si is a more promising solution: it has similar properties to SiC but for a redude cost. This poster prevents the research done at IEMN to develop a fabrication process for efficient and competitve fully vertical GaN-on-Si MOSFET, since such process remains immature to this day.

Source: HAL

Authors: Bidaud, Adrien, Hamdaoui, Youssef, Ziouche, Katir, Medjdoub, Farid

Institutions: Institut d'Electronique, de Microélectronique et de Nanotechnologie, Centre National de la Recherche Scientifique, Université de Lille, Centrale Lille Institut

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: green

OpenAlex ID: W7207076570

FWCI:

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