Work

Design and analysis of Ba(Zr,Sn)S3 triple junction tandem solar cells

Year: 2026

Type: article

Abstract: A lead-free triple-junction tandem solar cell architecture based on chalcogenide perovskite absorbers — BaZrS 3 (1.7 eV), BaZr 0.875 Sn 0.125 S 3 (1.48 eV), and BaZr 0.750 Sn 0.250 S 3 (0.96 eV) — is proposed and analyzed. To increase solar spectrum utilization and allow current matching between sub-cells, band gap engineering using Sn substitution was used. Two configurations were investigated: a baseline model using TiO 2 and Spiro-OMETAD as electron transport layers (ETL) and hole transport layers (HTL) in all three sub-cells, respectively, and an optimized model that employed WO 3 as ETL in the top cell, BaSnO 3 as ETL in the middle cell, and FeS 2 as a high-mobility HTL for the top and middle cells. Monolithic current matching was achieved through systematic tuning of absorber thickness; the optimized design achieved a maximum power conversion efficiency (PCE) of 37.59%, an absolute improvement of 13.15%, while the baseline device reached a PCE of 24.44%. These results demonstrate the promise of BaZr 1-x Sn x S 3 -based absorbers and innovative transport layer engineering for stable, environmentally sustainable, high-efficiency tandem photovoltaics.

Source: Results in Surfaces and Interfaces

DOI: 10.1016/j.rsurfi.2026.100964

Authors: Mohsen Saadat, Samaneh Mozaffari

Institutions: University of Sistan and Baluchestan, Chabahar Maritime University

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Estimated APC paid: $1,190