P‐11: Distinguished Poster Paper: High‐Mobility Indium Gallium Oxide TFTs Fabricated from an Aqueous Precursor with Excimer‐Light Activation
Year: 2026
Type: conference-paper
Abstract: A 172 nm excimer‐light‐assisted aqueous process enables low‐temperature formation of polycrystalline In₂O₃ thin films at 200 °C and achieves mobilities exceeding 100 cm²/V·s after optimized annealing. Ga incorporation suppresses interface traps and hysteresis while preserving high mobility, providing a scalable, vacuum‐free, low‐thermal‐budget route to high‐performance oxide backplanes.
Institutions: Osaka Institute of Technology, Ushio (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W7212295104