Work

The Effect of the Gate Material in MIS Structures on the High-Field Charge Degradation in the Gate Dielectric

Year: 2026

Type: article

Source: Inorganic Materials Applied Research

DOI: 10.1134/s2075113326700905

Authors: D. V. Andreev, S. A. Kornev, G. G. Bondarenko, V. V. Andreev

Institutions: Bauman Moscow State Technical University, National Research University Higher School of Economics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7214079727

FWCI:

Cites: 30

Cited by:

Related to: 10