Work

Impact of Geometrical Modification at the Electrode/Channel Interface on a-IGZO Transistors

Year: 2026

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2026.3736022

Authors: Dong-Seon Kim, Joo Hee Jeong, Seonwoong Bang, Gwang-Bok Kim, Seong Hun Yoon, Minsun Kim, Sunghyun Choi, Kwangmin Park, Jae Kyeong Jeong

Institutions: Hanyang University, Samsung Electronics (South Korea)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Samsung

OpenAlex ID: W7214188652

FWCI:

Cites: 24

Cited by:

Related to: 10