Work

Single-crystal rhombohedral boron nitride wafers for integrated sliding ferroelectric memory

Year: 2026

Type: article

Source: Nature Nanotechnology

DOI: 10.1038/s41565-026-02280-4

Institutions: Peking University, Collaborative Innovation Center of Quantum Matter, University of Science and Technology Beijing, Chinese Academy of Sciences, Institute of Physics, Songshan Lake Materials Laboratory, Westlake University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G4950625565, G9000455158, G9000458696, G9000519180

OpenAlex ID: W7214764795

FWCI: 1.317

Cites: 48

Cited by: 1

Related to: 10