Properties of nonpolar preferentially oriented ZnO thin films prepared via a Ni²⁺-ion-assisted method
Year: 2026
Type: article
Abstract: To address the challenges of achieving spontaneous polarisation effects and p-type modification in typical polar ZnO materials, this work employed a low-temperature chemical bath deposition method. Utilising Ni(CH 3 COO) 2 as the nickel source and orientation-controlling agent, we successfully fabricated ZnO thin films with non-polar preferred growth orientations [(100) and (110)], doped with low concentrations of Ni²⁺. The samples were systematically characterised using field emission scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet-visible spectrophotometry, and photoluminescence spectroscopy. Results indicate that by controlling the concentration of Ni(CH₃COO)₂, ZnO films with low Ni²⁺ doping and distinct non-polar preferred orientations can be fabricated. Building on this, the principles governing alterations to the preferential orientation and the doping mechanism were analysed. The low-concentration Ni²⁺-doped ZnO samples prepared with a 5 at% concentration of Ni(CH₃COO)₂ exhibited favourable surface roughness. Photoluminescence spectra confirmed that Ni²⁺ doping combined with the preferential orientation of the non-polar (100) plane increases acceptor defects within the ZnO. This study demonstrates that the non-polar (100) preferred orientation, combined with Ni²⁺ doping, provides a structural and defect-engineering basis for promoting p-type modification. It provides novel insights for the preparation of various non-polar preferred-orientation ZnO-based nanomaterials and for the doping modification of ZnO.
Source: Materials Today Communications
Institution: Northeastern University
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,830
OpenAlex ID: W7214770697