Feasibility study of electrical spin-state detection in diamond NV centers based on spin-dependent tunneling
Year: 2026
Type: article
Abstract: Nitrogen-vacancy (NV) centers in diamond are promising candidates for solid-state qubits owing to their excellent spin coherence properties. Scaling up NV-based quantum information systems requires reducing the spacing between neighboring qubits. However, optical techniques are fundamentally limited by diffraction, making individual qubit addressing increasingly challenging at short distances. Electrical detection of NV spin states using ferromagnetic electrodes would provide an attractive route toward scalable qubit architectures. In this work, we investigate the feasibility of electrically detecting NV spin states through spin-dependent tunneling. Diamond substrates with NV centers (~2 nm deep) were fabricated via N-ion implantation and coupled with a 10-nm Co film. PL measurements show positive bias converts NV- to NV0 (electron extraction), while negative bias restores NV-. This enables electrical NV charge-state control toward spin-dependent tunneling detection.
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7219223751