Work

Mitigation of bipolar degradation in 4H-SiC power devices using engineered SiC substrates

Year: 2026

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2026.111261

Authors: Endong Zhang, Alexis Drouin, Frederic Allibert, Marcin Zielinski, Shunta Harada, Masashi Kato

Institutions: Nagoya Institute of Technology, Soitec (France), Nagoya University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W7220856485

FWCI:

Cites: 34

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Related to: 10